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罗拉无线模块高性能可编程晶振X1G005321002200

2022-10-10 14:05:29 康华尔电子

爱普生可编程晶振能适应各种客户的独特需求.由于其制造工艺处于世界顶尖水平，价格也是相对于其他平牌要高.被广泛的应用于各类计量仪表，罗拉无线模块，医疗电子设备，汽车电子和各类高端消费类电子产品.

爱普生晶振SG-9101CE系列是一种通过调整时钟频率降低EMI电磁干扰的可编程晶振，频率可编程范围0.67MHz至170MHz（每步1ppm），扩展频率范围±0.25%至±4%。SG-9101系列新品提供更宽广的操作温度范围，及降低50%的消耗电流，SG-9101贴片晶振使用时可选购搭配现有的SG-Writer II专用刻录器，即可自行定义SG-9101可降低电磁干扰（EMI）展频晶体振荡器的中心频率。

罗拉无线模块高性能晶振X1G005321002200

有源晶振 频率 型号 尺寸(长宽高) 输出波 电源电压 工作温度
X1G005321001100 27.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001200 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321001300 40.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001400 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001500 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321001600 66.666000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001700 66.666000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001800 40.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321001900 74.250000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321002000 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321002100 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321002200 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321002300 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321002400 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321002500 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321002600 20.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321002700 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321002800 40.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321002900 80.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003000 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321003100 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321003200 15.728640MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003300 37.125000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003400 24.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003500 37.125000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C

SG-9101CG，SG-9101CE,SG-9101CB,SG-9101CA

X1G005321003600 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321003700 33.333000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003800 33.333000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321003900 26.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321004000 24.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321004100 10.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321004200 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321004300 24.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321004600 100.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321004700 49.152000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321004800 12.288000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321004900 48.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321005000 32.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321005100 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321005200 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321005300 25.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321005600 12.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321005700 15.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C
X1G005321005800 34.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321005900 148.500000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321006000 34.000000MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 105 °C
X1G005321006100 11.289600MHz SG-9101CE 3.20x2.50x1.20mm CMOS 1.620 to 3.630 V -40 to 85 °C

罗拉无线模块高性能晶振X1G005321002200

可编程晶振就是可以满足任何频点的石英晶体振荡器，经过频率发生器的放大或缩小后实现各种不同的总线频率。可编程晶振实为有源晶振，石英可编程（Q MEMS）具有高稳定、高精度等优越性能的石英材料[QUARTZ]和[MEMS]组合而成的造词，以石英为原料进行精微加工(光刻)并可以提供的小型化、高性能的晶体元器件被称为[Q MEMS]。



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