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爱普生的石英晶体振荡器很适合广泛环境条件应用X1G005591001300

2022-09-02 17:55:09 

爱普生的石英晶体振荡器很适合广泛环境条件应用X1G005591001300,高科技带来革命性的创新,无形之中影响着我们的生活,并且为我们的生活增添光彩,那么在这个与科技相关的产品线之中,又有着怎样的千丝万缕关系呢,到底晶振对于科技有着怎样的影响力?又该如何选择一颗适合的晶振呢、选择无源晶振还是有源晶体振荡器更加能凸显产品的特性呢,这些都是需要我们认真考虑的因素,但是选择适合的晶振绝不是那么简单的事,值得我们认真对待,每一款晶振都需要用心去选择。

Product Number 爱普生晶振型号
Frequency LxWxH Output Wave Supply Voltage Ope Temperature Freq. Tol. I [Max]
X1G005351007800 SG3225VEN 50.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 3.135 to 3.465 V -40 to 85 °C +/-25 ppm ≤ 25.0 mA
X1G005351007900 SG3225VEN 155.520000 MHz 3.20 x 2.50 x 1.20 mm LVDS 3.135 to 3.465 V -40 to 85 °C +/-50 ppm ≤ 25.0 mA
X1G005351100200 SG3225VEN 125.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-25 ppm ≤ 25.0 mA
X1G005351100400 SG3225VEN 100.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-25 ppm ≤ 25.0 mA
X1G005351100600 SG3225VEN 156.250000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-50 ppm ≤ 25.0 mA
X1G005351100700 SG3225VEN 125.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 105 °C +/-50 ppm ≤ 25.0 mA
X1G005351100800 SG3225VEN 100.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-50 ppm ≤ 25.0 mA
X1G005351100900 SG3225VEN 125.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-50 ppm ≤ 25.0 mA
X1G005351101000 SG3225VEN 25.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-25 ppm ≤ 25.0 mA
X1G005351101100 SG3225VEN 72.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-100 ppm ≤ 25.0 mA
X1G005351101200 SG3225VEN 156.250000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 105 °C +/-50 ppm ≤ 25.0 mA
X1G005351101300 SG3225VEN 133.333000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-25 ppm ≤ 25.0 mA
X1G005351101400 SG3225VEN 50.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-50 ppm ≤ 25.0 mA
X1G005351101500 SG3225VEN 50.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 105 °C +/-50 ppm ≤ 25.0 mA
X1G005351101600 SG3225VEN 100.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 105 °C +/-50 ppm ≤ 25.0 mA
X1G005351101800 SG3225VEN 156.242187 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-50 ppm ≤ 25.0 mA
X1G005351101900 SG3225VEN 200.000000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-25 ppm ≤ 25.0 mA
X1G005351102000 SG3225VEN 148.351648 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-25 ppm ≤ 25.0 mA
X1G005351102100 SG3225VEN 148.500000 MHz 3.20 x 2.50 x 1.20 mm LVDS 2.375 to 2.625 V -40 to 85 °C +/-25 ppm ≤ 25.0 mA
X1G005591001100 SG-8018CE 25.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591001200 SG-8018CE 25.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591001300 SG-8018CE 20.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
X1G005591001400 SG-8018CE 20.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
爱普生的石英晶体振荡器很适合广泛环境条件应用X1G005591001300,相对于普通的晶体谐振器,有源晶振技术要求更高,起振性能更稳定,一般都是用在高端的产品身上,大致分为普通振荡器SPXO,TCXO温补晶振TCXO,VCXO压控晶振,VC-TCXO压控温补晶振,OCXO恒温晶振,差分晶振等。每种石英晶体振荡器都具备不一样的功能,但同样拥有低功耗,低电压电流,低相位抖动,低相噪等优异特性。

SG-8018CA晶振是晶体振荡器(Oscillator)的简称,也称为有源晶振。进口有源晶振内部集成了起振电路,无需外部添加其他元器件即可正常工作,但其需要外部电源供电。

在封装上晶体通常为两脚和四脚,晶振通常为四脚或四脚以上。可以肯定的是,两脚的一定是晶体。 对于四脚的晶体和晶振,需要观察其外围电路是否有其他器件连接,如若无则为有源晶振。或者查看高度,一般晶振的厚度比晶体要高。

Product Number 爱普生晶振型号 Frequency LxWxH Output Wave Supply Voltage Ope Temperature Freq. Tol. I [Max]
X1G005591001500 SG-8018CE 50.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591001600 SG-8018CE 50.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591001700 SG-8018CE 48.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591001800 SG-8018CE 48.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591001900 SG-8018CE 24.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591002000 SG-8018CE 24.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591002100 SG-8018CE 40.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591002200 SG-8018CE 40.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591002300 SG-8018CE 16.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
X1G005591002400 SG-8018CE 16.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
X1G005591002500 SG-8018CE 12.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
X1G005591002600 SG-8018CE 12.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
X1G005591002700 SG-8018CE 10.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
X1G005591002800 SG-8018CE 10.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
X1G005591002900 SG-8018CE 27.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591003000 SG-8018CE 27.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591003100 SG-8018CE 32.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591003200 SG-8018CE 32.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 4.4 mA
X1G005591003300 SG-8018CE 8.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
X1G005591003400 SG-8018CE 8.000000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
X1G005591003500 SG-8018CE 14.745600 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
X1G005591003600 SG-8018CE 14.745600 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
X1G005591003700 SG-8018CE 12.288000 MHz 3.20 x 2.50 x 1.20 mm CMOS 1.620 to 3.630 V -40 to 105 °C +/-50 ppm ≤ 3.5 mA
爱普生晶振公司发布了SG-8018CE晶振,编码X1G005591001300,MEMS振荡器爱普生的SG-8018系列是可编程晶体振荡器系列CMOS输出。这个系列提供了频率和其他参数的可编程性SG-8002/SG-8003系列,它们也具有更广泛的工作温度范围,最高极限为105°C。除了2.5 × 2.0 mm的封装,将使电子制造商节省板空间,该振荡器也将在以下流行的封装尺寸:3.2 × 2.5 mm, 5.0 × 3.2 mm和7.0 × 5.0 mm。SG-8018系列有源贴片晶振的频率容忍度约为66%比同类产品低50%的电流消耗,适用范围广环境条件。这也将大大有助于性能,更低的功率要求,快速开发周期和低量生产。

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