X1G004611A03300具有高响应速度的2520mm封装汽车级晶振

产品编码	型号	频率	有源晶振	输出波	电源电压	工作温度
X1G004611A00100	SG-210SEBA	24.000000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A00300	SG-210SEBA	27.000000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 125 °C
X1G004611A00400	SG-210SEBA	20.000000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 125 °C
X1G004611A00500	SG-210SEBA	27.000000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A01200	SG-210SEBA	24.000000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A01300	SG-210SEBA	33.000000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G004611A01400	SG-210SEBA	16.666600 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G004611A01600	SG-210SEBA	14.000000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A01700	SG-210SEBA	37.125000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A01900	SG-210SEBA	13.000000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A02000	SG-210SEBA	10.000000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G004611A02100	SG-210SEBA	48.000000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 105 °C
X1G004611A02200	SG-210SEBA	16.660000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G004611A02400	SG-210SEBA	14.745600 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 85 °C
X1G004611A02500	SG-210SEBA	16.640000 MHz	2.50x2.00x0.90mm	CMOS	1.600 to 2.200 V	-40 to 85 °C

CMOS(Complementary Metal-Oxide-Semiconductor)，中文学名为互补金属氧化物半导体，制造技术和一般计算机芯片没什么差别，电压控制的一种放大器件，主要是利用硅和锗这两种元素所做成的半导体，使其在CMOS上共存着带N(带-电)和P(带+电)级的半导体，这两个互补效应所产生的电流即可被处理芯片纪录和解读成影像。