百利通亚陶编码UF703VIJ24.000000QX是一款高可靠性能,用于光学模块和网络系统的晶体振荡器,ECERA品牌
百利通亚陶编码UF703VIJ24.000000QX是一款高可靠性能,用于光学模块和网络系统的晶体振荡器,ECERA品牌,Diodes百利通亚陶晶振公司(纳斯达克股票代码:DIOD)今天宣布推出AP7353低压差稳压器,该稳压器采用小封装提供高电源抑制比 (PSRR),可满足可穿戴设备等对噪声敏感的电池供电设备的电压调节需求,便携式设备和连接的传感器。
KK3270051 | Diodes晶振 | SaRonix-eCera™ KK | 32.768kHz | ±25ppm | -40°C ~ 85°C |
KK3270051 | Diodes晶振 | SaRonix-eCera™ KK | 32.768kHz | ±25ppm | -40°C ~ 85°C |
JX5011C0120.000000 | Diodes晶振 | SaRonix-eCera™ JX | 120MHz | ±50ppm | -20°C ~ 70°C |
JX5011C0120.000000 | Diodes晶振 | SaRonix-eCera™ JX | 120MHz | ±50ppm | -20°C ~ 70°C |
JX5011C0120.000000 | Diodes晶振 | SaRonix-eCera™ JX | 120MHz | ±50ppm | -20°C ~ 70°C |
KX2132709Z | Diodes晶振 | SaRonix-eCera™ KX | 32.768kHz | ±25ppm | -20°C ~ 70°C |
KX2132709Z | Diodes晶振 | SaRonix-eCera™ KX | 32.768kHz | ±25ppm | -20°C ~ 70°C |
KX2132709Z | Diodes晶振 | SaRonix-eCera™ KX | 32.768kHz | ±25ppm | -20°C ~ 70°C |
JX7012D0025.001875 | Diodes晶振 | SaRonix-eCera™ JX | 25.001875MHz | ±25ppm | -40°C ~ 85°C |
JX7012D0025.001875 | Diodes晶振 | SaRonix-eCera™ JX | 25.001875MHz | ±25ppm | -40°C ~ 85°C |
JX7012D0025.001875 | Diodes晶振 | SaRonix-eCera™ JX | 25.001875MHz | ±25ppm | -40°C ~ 85°C |
JX7011E0091.500000 | Diodes晶振 | SaRonix-eCera™ JX | 91.5MHz | ±50ppm | -40°C ~ 85°C |
JX7011E0091.500000 | Diodes晶振 | SaRonix-eCera™ JX | 91.5MHz | ±50ppm | -40°C ~ 85°C |
JX7011E0091.500000 | Diodes晶振 | SaRonix-eCera™ JX | 91.5MHz | ±50ppm | -40°C ~ 85°C |
KJ3270004Z | Diodes晶振 | SaRonix-eCera™ KJ | 32.768kHz | ±50ppm | -20°C ~ 70°C |
KJ3270004Z | Diodes晶振 | SaRonix-eCera™ KJ | 32.768kHz | ±50ppm | -20°C ~ 70°C |
KJ3270004Z | Diodes晶振 | SaRonix-eCera™ KJ | 32.768kHz | ±50ppm | -20°C ~ 70°C |
PD10GE159 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 159.375MHz | ±50ppm | -20°C ~ 70°C |
PD10GE159 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 159.375MHz | ±50ppm | -20°C ~ 70°C |
PD10GE159 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 159.375MHz | ±50ppm | -20°C ~ 70°C |
PDGPON155 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 155.52MHz | ±50ppm | -40°C ~ 85°C |
PDGPON155 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 155.52MHz | ±50ppm | -40°C ~ 85°C |
PDGPON155 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 155.52MHz | ±50ppm | -40°C ~ 85°C |
JX7011D0104.000000 | Diodes晶振 | SaRonix-eCera™ JX | 104MHz | ±25ppm | -40°C ~ 85°C |
AP7353采用 X1-WLB0707-4(A1 型)和 X2-DFN1010-4(B 型)封装,每边的尺寸均小于 1mm。这些尺寸导致支持密集印刷电路板布局的小尺寸。尽管尺寸很大,AP7353 仍可提供目前部署到物联网中的最新电子设备所需的电压和电流水平,在 250mA 时高达 4.5V。
1kHz 时90dB的PSRR 和 18μA 的低静态电流使 AP7353 特别适用于包括噪声敏感模拟电路或射频接口的电池供电设备。AP7353 的高 PSRR及其 10µV 宽带噪声电压有助于支持高信噪比。这些属性将 AP7353 定位为该应用领域中领先的低压差 (LDO) 稳压器。
AP7353 的使能引脚允许 LDO 稳压器在不需要时进入待机模式。为了提高稳健性,还包括短路和过热保护。AP7353D 版本可在禁用时释放输出。百利通亚陶编码UF703VIJ24.000000QX是一款高可靠性能,用于光学模块和网络系统的晶体振荡器
FN2500246 | Diodes晶振 | SaRonix-eCera™ FN | 25MHz | ±50ppm | -20°C ~ 70°C |
FN2500246 | Diodes晶振 | SaRonix-eCera™ FN | 25MHz | ±50ppm | -20°C ~ 70°C |
FN2500246 | Diodes晶振 | SaRonix-eCera™ FN | 25MHz | ±50ppm | -20°C ~ 70°C |
FN1000064 | Diodes晶振 | SaRonix-eCera™ FN | 10MHz | ±50ppm | -20°C ~ 70°C |
FN1000064 | Diodes晶振 | SaRonix-eCera™ FN | 10MHz | ±50ppm | -20°C ~ 70°C |
FN1000064 | Diodes晶振 | SaRonix-eCera™ FN | 10MHz | ±50ppm | -20°C ~ 70°C |
UJ2600001 | Diodes晶振 | SaRonix-eCera™ UJ | 26MHz | ±20ppm | -30°C ~ 85°C |
UJ2600001 | Diodes晶振 | SaRonix-eCera™ UJ | 26MHz | ±20ppm | -30°C ~ 85°C |
UJ2600001 | Diodes晶振 | SaRonix-eCera™ UJ | 26MHz | ±20ppm | -30°C ~ 85°C |
FN7500043 | Diodes晶振 | SaRonix-eCera™ FN | 75MHz | ±25ppm | -20°C ~ 70°C |
FN7500043 | Diodes晶振 | SaRonix-eCera™ FN | 75MHz | ±25ppm | -20°C ~ 70°C |
FN7500043 | Diodes晶振 | SaRonix-eCera™ FN | 75MHz | ±25ppm | -20°C ~ 70°C |
FNSTB1027 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm | -20°C ~ 70°C |
FNSTB1027 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm | -20°C ~ 70°C |
FNSTB1027 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 27MHz | ±30ppm | -20°C ~ 70°C |
FNSURV054 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 54MHz | ±30ppm | -20°C ~ 70°C |
FNSURV054 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 54MHz | ±30ppm | -20°C ~ 70°C |
FNSURV054 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 54MHz | ±30ppm | -20°C ~ 70°C |
FDSAS6062 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 62.5MHz | ±50ppm | -20°C ~ 70°C |
FDSAS6062 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 62.5MHz | ±50ppm | -20°C ~ 70°C |
FDSAS6062 | Diodes晶振 | SaRonix-eCera™ ASSP XO™ | 62.5MHz | ±50ppm | -20°C ~ 70°C |
FN5000121 | Diodes晶振 | SaRonix-eCera™ FN | 50MHz | ±50ppm | -20°C ~ 70°C |
FN5000121 | Diodes晶振 | SaRonix-eCera™ FN | 50MHz | ±50ppm | -20°C ~ 70°C |
FN5000121 | Diodes晶振 | SaRonix-eCera™ FN | 50MHz | ±50ppm | -20°C ~ 70°C |
FD2450017 | Diodes晶振 | SaRonix-eCera™ FD | 24.576MHz | ±50ppm | -40°C ~ 85°C |
UF703/UF73 XO系列是有源晶体振荡器家庭优化节省板空间。系列由高性能LVDS晶体组成振荡器具有超低抖动性能满足严格的芯片组要求。它支持多种选择,包括更宽的频率范围,2.5V/3.3V电压,各种稳定性好。它是设计满足时钟源规格用于通信系统等高层设备性能。
FN3330078 | Diodes晶振 | SaRonix-eCera™ FN | 33.333MHz | ±30ppm | -40°C ~ 85°C |
FN3330078 | Diodes晶振 | SaRonix-eCera™ FN | 33.333MHz | ±30ppm | -40°C ~ 85°C |
FN0200045 | Diodes晶振 | SaRonix-eCera™ FN | 2.048MHz | ±50ppm | -20°C ~ 70°C |
FN0200045 | Diodes晶振 | SaRonix-eCera™ FN | 2.048MHz | ±50ppm | -20°C ~ 70°C |
FN0200045 | Diodes晶振 | SaRonix-eCera™ FN | 2.048MHz | ±50ppm | -20°C ~ 70°C |
NX51500001 | Diodes晶振 | SaRonix-eCera™ NX | 50MHz | ±25ppm | -40°C ~ 85°C |
NX51500001 | Diodes晶振 | SaRonix-eCera™ NX | 50MHz | ±25ppm | -40°C ~ 85°C |
NX51500001 | Diodes晶振 | SaRonix-eCera™ NX | 50MHz | ±25ppm | -40°C ~ 85°C |
FK2400017 | Diodes晶振 | SaRonix-eCera™ FK | 24MHz | ±25ppm | -40°C ~ 85°C |
FK2400017 | Diodes晶振 | SaRonix-eCera™ FK | 24MHz | ±25ppm | -40°C ~ 85°C |
FK2400017 | Diodes晶振 | SaRonix-eCera™ FK | 24MHz | ±25ppm | -40°C ~ 85°C |
FK2450016 | Diodes晶振 | SaRonix-eCera™ FK | 24.576MHz | ±25ppm | -20°C ~ 70°C |
FK2450016 | Diodes晶振 | SaRonix-eCera™ FK | 24.576MHz | ±25ppm | -20°C ~ 70°C |
FK2450016 | Diodes晶振 | SaRonix-eCera™ FK | 24.576MHz | ±25ppm | -20°C ~ 70°C |
FK2500025 | Diodes晶振 | SaRonix-eCera™ FK | 25MHz | ±25ppm | -40°C ~ 85°C |
FK2500025 | Diodes晶振 | SaRonix-eCera™ FK | 25MHz | ±25ppm | -40°C ~ 85°C |
FK2500025 | Diodes晶振 | SaRonix-eCera™ FK | 25MHz | ±25ppm | -40°C ~ 85°C |
FK2500067 | Diodes晶振 | SaRonix-eCera™ FK | 25MHz | ±50ppm | -40°C ~ 105°C |
FK2500067 | Diodes晶振 | SaRonix-eCera™ FK | 25MHz | ±50ppm | -40°C ~ 105°C |
FK2500067 | Diodes晶振 | SaRonix-eCera™ FK | 25MHz | ±50ppm | -40°C ~ 105°C |
FN5000138 | Diodes晶振 | SaRonix-eCera™ FN | 50MHz | ±50ppm | -40°C ~ 85°C |
FN5000138 | Diodes晶振 | SaRonix-eCera™ FN | 50MHz | ±50ppm | -40°C ~ 85°C |
FN5000138 | Diodes晶振 | SaRonix-eCera™ FN | 50MHz | ±50ppm | -40°C ~ 85°C |
FN5000145 | Diodes晶振 | SaRonix-eCera™ FN | 50MHz | ±50ppm | -40°C ~ 85°C |
FN5000145 | Diodes晶振 | SaRonix-eCera™ FN | 50MHz | ±50ppm | -40°C ~ 85°C |
FN5000145 | Diodes晶振 | SaRonix-eCera™ FN | 50MHz | ±50ppm | -40°C ~ 85°C |
超低相位抖动
0.06 ps typ。0.08 ps RMS马克斯。(12千赫至20 mhz)
温度范围可达125℃
完全无铅,完全符合RoHS要求(无铅环保晶振)
无卤素和锑。“绿色”设备
汽车应用需要
具体变更控制(即零件合格
AEC-Q100/101/200, PPAP能力,和
在IATF 16949认证的工厂生产),
应用程序
网络系统
光学模块
服务器与存储系统
专业视频设备
测试和测量
FPGA/ASIC时钟生成
112G串行应用
“推荐阅读”
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