爱普生的石英晶体振荡器很适合广泛环境条件应用X1G005591001300，高科技带来革命性的创新，无形之中影响着我们的生活，并且为我们的生活增添光彩，那么在这个与科技相关的产品线之中，又有着怎样的千丝万缕关系呢，到底晶振对于科技有着怎样的影响力？又该如何选择一颗适合的晶振呢、选择无源晶振还是有源晶体振荡器更加能凸显产品的特性呢，这些都是需要我们认真考虑的因素，但是选择适合的晶振绝不是那么简单的事，值得我们认真对待，每一款晶振都需要用心去选择。

Product Number	爱普生晶振型号	Frequency	LxWxH	Output Wave	Supply Voltage	Ope Temperature	Freq. Tol.	I [Max]
X1G005351007800	SG3225VEN	50.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	3.135 to 3.465 V	-40 to 85 °C	+/-25 ppm	≤ 25.0 mA
X1G005351007900	SG3225VEN	155.520000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	3.135 to 3.465 V	-40 to 85 °C	+/-50 ppm	≤ 25.0 mA
X1G005351100200	SG3225VEN	125.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-25 ppm	≤ 25.0 mA
X1G005351100400	SG3225VEN	100.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-25 ppm	≤ 25.0 mA
X1G005351100600	SG3225VEN	156.250000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-50 ppm	≤ 25.0 mA
X1G005351100700	SG3225VEN	125.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 105 °C	+/-50 ppm	≤ 25.0 mA
X1G005351100800	SG3225VEN	100.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-50 ppm	≤ 25.0 mA
X1G005351100900	SG3225VEN	125.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-50 ppm	≤ 25.0 mA
X1G005351101000	SG3225VEN	25.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-25 ppm	≤ 25.0 mA
X1G005351101100	SG3225VEN	72.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-100 ppm	≤ 25.0 mA
X1G005351101200	SG3225VEN	156.250000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 105 °C	+/-50 ppm	≤ 25.0 mA
X1G005351101300	SG3225VEN	133.333000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-25 ppm	≤ 25.0 mA
X1G005351101400	SG3225VEN	50.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-50 ppm	≤ 25.0 mA
X1G005351101500	SG3225VEN	50.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 105 °C	+/-50 ppm	≤ 25.0 mA
X1G005351101600	SG3225VEN	100.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 105 °C	+/-50 ppm	≤ 25.0 mA
X1G005351101800	SG3225VEN	156.242187 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-50 ppm	≤ 25.0 mA
X1G005351101900	SG3225VEN	200.000000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-25 ppm	≤ 25.0 mA
X1G005351102000	SG3225VEN	148.351648 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-25 ppm	≤ 25.0 mA
X1G005351102100	SG3225VEN	148.500000 MHz	3.20 x 2.50 x 1.20 mm	LVDS	2.375 to 2.625 V	-40 to 85 °C	+/-25 ppm	≤ 25.0 mA
X1G005591001100	SG-8018CE	25.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591001200	SG-8018CE	25.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591001300	SG-8018CE	20.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591001400	SG-8018CE	20.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA

爱普生的石英晶体振荡器很适合广泛环境条件应用X1G005591001300，相对于普通的晶体谐振器,有源晶振技术要求更高,起振性能更稳定,一般都是用在高端的产品身上,大致分为普通振荡器SPXO，TCXO温补晶振TCXO，VCXO压控晶振，VC-TCXO压控温补晶振，OCXO恒温晶振，差分晶振等。每种石英晶体振荡器都具备不一样的功能,但同样拥有低功耗，低电压电流，低相位抖动，低相噪等优异特性。

晶振是晶体振荡器（Oscillator）的简称，也称为有源晶振。进口有源晶振内部集成了起振电路，无需外部添加其他元器件即可正常工作，但其需要外部电源供电。

在封装上晶体通常为两脚和四脚，晶振通常为四脚或四脚以上。可以肯定的是，两脚的一定是晶体。 对于四脚的晶体和晶振，需要观察其外围电路是否有其他器件连接，如若无则为有源晶振。或者查看高度，一般晶振的厚度比晶体要高。

Product Number	爱普生晶振型号	Frequency	LxWxH	Output Wave	Supply Voltage	Ope Temperature	Freq. Tol.	I [Max]
X1G005591001500	SG-8018CE	50.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591001600	SG-8018CE	50.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591001700	SG-8018CE	48.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591001800	SG-8018CE	48.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591001900	SG-8018CE	24.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591002000	SG-8018CE	24.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591002100	SG-8018CE	40.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591002200	SG-8018CE	40.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591002300	SG-8018CE	16.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591002400	SG-8018CE	16.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591002500	SG-8018CE	12.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591002600	SG-8018CE	12.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591002700	SG-8018CE	10.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591002800	SG-8018CE	10.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591002900	SG-8018CE	27.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591003000	SG-8018CE	27.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591003100	SG-8018CE	32.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591003200	SG-8018CE	32.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591003300	SG-8018CE	8.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591003400	SG-8018CE	8.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591003500	SG-8018CE	14.745600 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591003600	SG-8018CE	14.745600 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591003700	SG-8018CE	12.288000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA

爱普生晶振公司发布了SG-8018CE晶振，编码X1G005591001300，MEMS振荡器爱普生的SG-8018系列是可编程晶体振荡器系列CMOS输出。这个系列提供了频率和其他参数的可编程性SG-8002/SG-8003系列，它们也具有更广泛的工作温度范围，最高极限为105°C。除了2.5 × 2.0 mm的封装，将使电子制造商节省板空间，该振荡器也将在以下流行的封装尺寸:3.2 × 2.5 mm, 5.0 × 3.2 mm和7.0 × 5.0 mm。SG-8018系列有源贴片晶振的频率容忍度约为66%比同类产品低50%的电流消耗，适用范围广环境条件。这也将大大有助于性能，更低的功率要求，快速开发周期和低量生产。