GPS定位器专用晶振SG-8018CB编码X1G005581001900
爱普生晶振热销型号SG-8018系列产品,是一款可编程晶体振荡器系列,共四种型号分别为SG-8018CA、SG-8018CB、SG-8018CE、SG-8018CG,支持CMOS输出,四脚贴片晶振,频率调节精度可达1ppm,相比同级别元件的功耗、频率稳定性都有明显提升,SG-8018系列产品具有更宽的工作温度范围,除了一个2.5mmx2.0mm的封装,使电子制造商能够节省电路板空间,振荡器还可以在以下流行的封装尺寸中获得3.2mmx2.5mm,5.0mmx3.2mm和7.0mmx5.0mm有源晶振,用户将能够利用SG-Writer II*1编程工具对SG8108系列和扩频振荡器进行编程。用于5G通讯、工业控制、车载、消费电子、光电技术及各种变频调速设备等通讯设备。
GPS定位器专用晶振SG-8018CB编码X1G005581001900
进口石英晶振 | 频率 | 型号 | 尺寸(长宽高) | 输出波 | 电源电压 | 工作温度 |
X1G005581001100 | 25.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581001200 | 25.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581001300 | 20.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581001400 | 20.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581001500 | 50.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581001600 | 50.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581001700 | 48.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581001800 | 48.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581001900 | 24.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581002000 | 24.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581002100 | 40.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581002200 | 40.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581002300 | 16.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581002400 | 16.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581002500 | 12.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581002600 | 12.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581002700 | 10.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581002800 | 10.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581002900 | 27.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581003000 | 27.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581003100 | 32.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581003200 | 32.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581003300 | 8.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581003400 | 8.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581003500 | 14.745600MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581003600 | 14.745600MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581003700 | 12.288000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581003800 | 12.288000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581003900 | 33.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581004000 | 33.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581004100 | 30.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581004200 | 30.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581004300 | 26.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581004400 | 26.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581004500 | 24.576000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581004600 | 24.576000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581004700 | 100.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581004800 | 100.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581004900 | 4.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581005000 | 4.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581005100 | 66.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581005200 | 66.000000MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
X1G005581005300 | 19.660800MHz | SG-8018CB | 5.00x3.20x1.30mm | CMOS | 1.620 to 3.630V | -40 to 105°C |
特征:
晶体振荡器(可编程)
输出频率:0.67MHz至170MHz (1x10-6步进)
输出:CMOS
电源电压:1.62V至3.63V
频率容差、工作温度:50×10-6/-40℃至+105℃,*包括频率老化(+25℃,10年)
可编程晶振就是可以满足任何频点的晶体振荡器,经过频率发生器的放大或缩小后实现各种不同的总线频率。可编程晶振实为有源晶振,石英可编程(Q MEMS)具有高稳定、高精度等优越性能的石英材料[QUARTZ]和[MEMS]组合而成的造词,以石英为原料进行精微加工(光刻)并可以提供的小型化、高性能的晶体元器件被称为[Q MEMS]。应用于5G-WIFI6、物联网通讯、钟表、车载导航、智能手机、对讲机、数码产品,光电技术等通讯设备及各种频率控制设备。
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