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当前位置首页 » 新闻资讯 » X1G004611A03300具有高响应速度的2520mm封装汽车级晶振

X1G004611A03300具有高响应速度的2520mm封装汽车级晶振

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扫一扫!X1G004611A03300具有高响应速度的2520mm封装汽车级晶振扫一扫!
浏览:- 发布日期:2022-09-07 13:47:52【
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爱普生是日本有名的频率元件制造商,专业生产销售石英晶振,石英晶体振荡器,贴片晶振,晶体滤波器等.发展至今已是国际有名的晶体元件制造商,致力于为客户提供高性能,高可靠,高品质晶振产品。

爱普生晶振SG-210SEBA是一款CMOS输出的晶体振荡器,具有高响应速度的2520mm封装汽车级晶振,具有低电流消耗,1.8V至3.3V的宽工作电源电压,以及-40℃至+85的宽工作温度范围,此外还可提供高达125的工作温度。符合AEC-Q200标准,是汽车和高可靠性应用的理想选择输出频率范围在2MHz至60MHz,范围较广产品具有良好的频率可靠性应用于ADAS(高级驾驶员辅助系统):摄像头,LiDAR(光检测和测距),雷达,网络连接,汽车信息娱乐系统,音频,时钟,仪表,集群,汽车导航系统等。

X1G004611A03300具有高响应速度的2520mm封装汽车级晶振

产品编码 型号 频率 有源晶振 输出波 电源电压 工作温度
X1G004611A00100 SG-210SEBA 24.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A00300 SG-210SEBA 27.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 125 °C
X1G004611A00400 SG-210SEBA 20.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 125 °C
X1G004611A00500 SG-210SEBA 27.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A01200 SG-210SEBA 24.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A01300 SG-210SEBA 33.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 85 °C
X1G004611A01400 SG-210SEBA 16.666600 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 85 °C
X1G004611A01600 SG-210SEBA 14.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A01700 SG-210SEBA 37.125000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A01900 SG-210SEBA 13.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A02000 SG-210SEBA 10.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 85 °C
X1G004611A02100 SG-210SEBA 48.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A02200 SG-210SEBA 16.660000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 85 °C
X1G004611A02400 SG-210SEBA 14.745600 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 85 °C
X1G004611A02500 SG-210SEBA 16.640000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 85 °C

SG-210SEBA,SG-210SDBA,SG-210SCBA

X1G004611A02600 SG-210SEBA 24.576000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 85 °C
X1G004611A02700 SG-210SEBA 12.288000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A02800 SG-210SEBA 25.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A03000 SG-210SEBA 48.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 85 °C
X1G004611A03100 SG-210SEBA 25.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 125 °C
X1G004611A03300 SG-210SEBA 24.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 125 °C
X1G004611A03400 SG-210SEBA 20.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A03500 SG-210SEBA 41.250000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A03600 SG-210SEBA 16.640000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A03700 SG-210SEBA 16.510000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A03800 SG-210SEBA 9.600000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A04100 SG-210SEBA 16.666600 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A04200 SG-210SEBA 33.300000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A04300 SG-210SEBA 25.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 85 °C
X1G004611A04400 SG-210SEBA 33.000000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A04500 SG-210SEBA 49.500000 MHz 2.50x2.00x0.90mm CMOS 1.600 to 2.200 V -40 to 105 °C
X1G004611A03300具有高响应速度的2520mm封装汽车级晶振
CMOS输出晶振指的是I/O口的输出的电路类型,CMOS用的是增强型场效应管,它具有输入阻抗高,输出阻抗低,跨导大,抗干扰能力强,功耗低等特点.目前的数字电路除了CMOS的还有TTL的,而TTL是比较早期的,CMOS是后来改进的.

CMOS(Complementary Metal-Oxide-Semiconductor),中文学名为互补金属氧化物半导体,制造技术和一般计算机芯片没什么差别,电压控制的一种放大器件,主要是利用硅和锗这两种元素所做成的半导体,使其在CMOS上共存着带N(带-电)和P(带+电)级的半导体,这两个互补效应所产生的电流即可被处理芯片纪录和解读成影像。