X1G004611A03300具有高响应速度的2520mm封装汽车级晶振
爱普生是日本有名的频率元件制造商,专业生产销售石英晶振,石英晶体振荡器,贴片晶振,晶体滤波器等.发展至今已是国际有名的晶体元件制造商,致力于为客户提供高性能,高可靠,高品质晶振产品。
爱普生晶振SG-210SEBA是一款CMOS输出的晶体振荡器,具有高响应速度的2520mm封装汽车级晶振,具有低电流消耗,1.8V至3.3V的宽工作电源电压,以及-40℃至+85℃的宽工作温度范围,此外还可提供高达125℃的工作温度。符合AEC-Q200标准,是汽车和高可靠性应用的理想选择。输出频率范围在2MHz至60MHz,范围较广,产品具有良好的频率可靠性,应用于ADAS(高级驾驶员辅助系统):摄像头,LiDAR(光检测和测距),雷达,网络连接,汽车信息娱乐系统,音频,时钟,仪表,集群,汽车导航系统等。X1G004611A03300具有高响应速度的2520mm封装汽车级晶振
产品编码 | 型号 | 频率 | 有源晶振 | 输出波 | 电源电压 | 工作温度 |
X1G004611A00100 | SG-210SEBA | 24.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A00300 | SG-210SEBA | 27.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C |
X1G004611A00400 | SG-210SEBA | 20.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C |
X1G004611A00500 | SG-210SEBA | 27.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A01200 | SG-210SEBA | 24.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A01300 | SG-210SEBA | 33.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A01400 | SG-210SEBA | 16.666600 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A01600 | SG-210SEBA | 14.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A01700 | SG-210SEBA | 37.125000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A01900 | SG-210SEBA | 13.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A02000 | SG-210SEBA | 10.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A02100 | SG-210SEBA | 48.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A02200 | SG-210SEBA | 16.660000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A02400 | SG-210SEBA | 14.745600 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A02500 | SG-210SEBA | 16.640000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A02600 | SG-210SEBA | 24.576000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A02700 | SG-210SEBA | 12.288000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A02800 | SG-210SEBA | 25.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A03000 | SG-210SEBA | 48.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A03100 | SG-210SEBA | 25.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C |
X1G004611A03300 | SG-210SEBA | 24.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 125 °C |
X1G004611A03400 | SG-210SEBA | 20.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A03500 | SG-210SEBA | 41.250000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A03600 | SG-210SEBA | 16.640000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A03700 | SG-210SEBA | 16.510000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A03800 | SG-210SEBA | 9.600000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A04100 | SG-210SEBA | 16.666600 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A04200 | SG-210SEBA | 33.300000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A04300 | SG-210SEBA | 25.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 85 °C |
X1G004611A04400 | SG-210SEBA | 33.000000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
X1G004611A04500 | SG-210SEBA | 49.500000 MHz | 2.50x2.00x0.90mm | CMOS | 1.600 to 2.200 V | -40 to 105 °C |
CMOS输出晶振指的是I/O口的输出的电路类型,CMOS用的是增强型场效应管,它具有输入阻抗高,输出阻抗低,跨导大,抗干扰能力强,功耗低等特点.目前的数字电路除了CMOS的还有TTL的,而TTL是比较早期的,CMOS是后来改进的.
CMOS(Complementary Metal-Oxide-Semiconductor),中文学名为互补金属氧化物半导体,制造技术和一般计算机芯片没什么差别,电压控制的一种放大器件,主要是利用硅和锗这两种元素所做成的半导体,使其在CMOS上共存着带N(带-电)和P(带+电)级的半导体,这两个互补效应所产生的电流即可被处理芯片纪录和解读成影像。
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